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Kimni Nesigurna automat ali tesnilo v betonskih ceveh propade Zeljeznicka stanica Nažalost kaiš

Power Electronics Devices based on Al-rich Aluminum Gallium Nitride
Power Electronics Devices based on Al-rich Aluminum Gallium Nitride

Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co
Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co

Electrical treeing characteristics of alumina-, zinc oxide-, and organoclay-nanoparticle-filled XLPE nanocomposites. - Document - Gale Academic OneFile
Electrical treeing characteristics of alumina-, zinc oxide-, and organoclay-nanoparticle-filled XLPE nanocomposites. - Document - Gale Academic OneFile

Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices
Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar
Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar

Power Electronics Devices based on Al-rich Aluminum Gallium Nitride
Power Electronics Devices based on Al-rich Aluminum Gallium Nitride

Resistive-like Behavior of Ferroelectric p–n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films | ACS Applied Electronic Materials
Resistive-like Behavior of Ferroelectric p–n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films | ACS Applied Electronic Materials

CRADBinil VESTNIK
CRADBinil VESTNIK

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

CRADBinil VESTNIK
CRADBinil VESTNIK

Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co
Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co

Electrical treeing characteristics of alumina-, zinc oxide-, and organoclay-nanoparticle-filled XLPE nanocomposites. - Document - Gale Academic OneFile
Electrical treeing characteristics of alumina-, zinc oxide-, and organoclay-nanoparticle-filled XLPE nanocomposites. - Document - Gale Academic OneFile

Power Electronics Devices based on Al-rich Aluminum Gallium Nitride
Power Electronics Devices based on Al-rich Aluminum Gallium Nitride

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer

Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices
Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices

CRADBinil VESTNIK
CRADBinil VESTNIK

Power Electronics Devices based on Al-rich Aluminum Gallium Nitride
Power Electronics Devices based on Al-rich Aluminum Gallium Nitride

Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co
Differentiation of the Generation Potential of the Menilite and Istebna Beds of the Silesian Unit in the Carpathians Based on Co

Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar
Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar

Resistive-like Behavior of Ferroelectric p–n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films | ACS Applied Electronic Materials
Resistive-like Behavior of Ferroelectric p–n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films | ACS Applied Electronic Materials

Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices
Spatially controlled octahedral rotations and metal-insulator transitions in NdNiO3/SrTiO3 superlattices

Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar
Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar

Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar
Quantification of aleatory and epistemic uncertainty in bulk power system reliability evaluation | Semantic Scholar